The intrinsic electron and hole concentrations of a Si-based intrinsic semiconductor are $n_e^{(0)}$ and $n_h^{(0)}$, respectively. Upon doping with trivalent impurities the respective carrier concentrations become $n_e$ and $n_h$. Which of the following options is true?

• A

  $n_e=n_h$
• Correct answer
  B

  $n_h \gt n_h^{(0)}$
• C

  $n_e \gt n_e^{(0)}$
• D

  $n_e^{(0)}$ and $n_h^{(0)}$ are independent of temperature.

Hence, the correct answer is option: 'B'.