Q49 / 237 · NTA Abhyas (NEET) 2020 · Physics · Semiconductors

The dominant mechanisms for motion of charge carriers in forward and reverse biased silicon p-n junctions are

  • A
    Drift in forward bias, diffusion in reverse bias
  • Correct answer
    B
    Diffusion in forward bias, drift in reverse bias
  • C
    Diffusion in both forward and reverse bias
  • D
    Drift in both forward and reverse bias

Solution

For forward biased, majority charge carrier constitute current by diffusing to other side of junction. For reversed biased, minority charge carrier constitute small amount of leakage current by drifting due toexternally applied electric field.

Hence, the correct answer is option: 'B'.

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