Q183 / 200 · WBJEE 2013 · Physics

In an $n-p-n$ transistor

  • Correct answer
    A
    the emitter has higher degree of doping compared to that of the collector
  • B
    the collector has higher degree of doping compared to that of the emitter
  • C
    both the emitter and collector have same degree of doping
  • D
    the base region is most heavily doped

Solution

In an $n-p-n$ or $p-n-p$ transistor, the left hand side thick layer of the transistor is heavily doped known as emitter and right hand side thick layer of the transistor is moderately doped known as collector.

Hence, the correct answer is option: 'A'.

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