A common emitter amplifier circuit, built using an NPN transistor, is shown in the figure. Its dc current gain is $250$ , $R_{C} = 1 kΩ$ and $V_{C C} = 10 V$ . The minimum base current for $V_{C E}$ to reach saturation is

Question

A common emitter amplifier circuit, built using an NPN transistor, is shown in the figure. Its dc current gain is

250

,

R_{C} = 1 kΩ

and

V_{C C} = 10 V

. The minimum base current for

V_{C E}

to reach saturation is

MARKS Content Team · Accepted Answer

Correct answer: (B) 40 μA. Given, β=250 R_C=1000 Ω V_CC=10 V At saturation, V_CE=0 ⇒i_e=(10 V)/(1000 Ω)=10 mA Current gain factor, β=i_e/i_B ⇒i_B=i_e/(β)=(10 mA)/250 =40 μA

A common emitter amplifier circuit, built using an NPN transistor, is shown in the figure. Its dc current gain is $250$ , $R_{C} = 1 kΩ$ and $V_{C C} = 10 V$ . The minimum base current for $V_{C E}$ to reach saturation is

Solution

Relevant Questions

A common emitter amplifier circuit, built using an NPN transistor, is shown in the figure. Its dc current gain is 250, RC=1 kΩ and VCC=10 V . The minimum base current for VCE to reach saturation is

Solution

Relevant Questions

A common emitter amplifier circuit, built using an NPN transistor, is shown in the figure. Its dc current gain is $250$ , $R_{C} = 1 kΩ$ and $V_{C C} = 10 V$ . The minimum base current for $V_{C E}$ to reach saturation is